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30-Gb/s Optical Link Combining Heterogeneously Integrated III–V/Si Photonics With 32-nm CMOS Circuits

2015-02

07338724

http://www.scopus.com/inward/record.url?eid=2-s2.0-84923347115&partnerID=40&md5=5880e003b3aaac1af96bfc0568a8fa98

We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.

Instituto Tecnológico de Costa Rica

Lidia Gómez

Cartago - 300m Este del Estadio Fello Meza. Apartado 159-7050.

2550-2263, 2550-2365


Address: Av. Mariscal Antonio José de Sucre N58-63 y Fernández Salvador Edif. Olade - San Carlos, Quito - Ecuador.

Web: www.olade.org

Phone: (593 2) 259 8122 / 2598 280

Correo: realc@olade.org

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